capability: (scr, gto, igct, mct,. bjt, igbt, mosfet, diode). classification of state-of-the-art.
電力電子元件簡介
國立清華大學
https://www.ee.nthu.edu.tw › EE3840-(Devices)
(9) Unidirectional current capability: (SCR, GTO, IGCT, MCT,. BJT, IGBT, MOSFET, diode). Classification of state-of-the-art. Power Semi- conductors.
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電力電子元件簡介 - Studylib
studylib.net
https://studylib.net › ... › Microelectronics
... (TRIAC) (9) Unidirectional current capability: (SCR, GTO, IGCT, MCT, BJT, IGBT, MOSFET, diode) Power Semiconductors Classification of state-of-the-art ...
High-power active devices
CERN
https://cds.cern.ch › record › files
由 E Carroll 著作 · 2006 · 被引用 5 次 — Figure 1 shows the grouping of high-power semiconductors in which IGBTs and IGCTs are shown in bold to highlight the fact that these are
igbt igct scr igbt High-power active devices
https://www.researchgate.net/figure/Analysis-tree-of-power-semiconductor-technology-used-for-SSCBs_fig10_342292108
https://www.mdpi.com/1996-1073/15/12/4276
The range of marine parameters of silicon power electronic devices, drawing based on [3,12]. An analysis of the operational range of marine power electronic instruments shown in Table 1 indicates clearly that these factors are an important element of marine converting devices..
classification of power semiconductor devices
SRC PTC High-power active devices Switching semiconductor devices
https://electronicscoach.com/power-electronics.html/classification-of-power-semiconductor-devices
classification of power semiconductor devices
Types of Semiconductor Devices | Toshiba Electronic Devices & Storage Corporation | Asia-English
https://toshiba.semicon-storage.com/ap-en/semiconductor/knowledge/e-learning/discrete/chap1/chap1-7.html
GTO Thyristor